ssm6n29tu TOSHIBA Semiconductor CORPORATION, ssm6n29tu Datasheet - Page 2

• Manufacturer Part Number: ssm6n29tu
• Description: Toshiba Field-effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Marking
Precaution
this product. For normal switching operation, V
voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
V
(The relationship can be established as follows: V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
(a) Test Circuit
th
6
1
can be expressed as the voltage between gate and source when the low operating current value is I
KK1
2.5 V
5
2
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25 °C
th.
DD
IN
G
10 μs
: t
= 4.7 Ω
4
3
= 10 V
r
, t
f
< 5 ns
IN
Equivalent Circuit
V
DD
OUT
GS (on)
6
1
Q1
GS (off)
(b) V
(c) V
requires a higher voltage than V
5
2
Q2
< V
2
OUT
IN
4
3
(top view)
th
< V
GS (on).
V
DS (ON)
)
2.5 V
V
0 V
DD
th,
and V
10 %
t
on
t
GS (off)
r
10 %
90 %
SSM6N29TU
requires a lower
90 %
t
D
2007-11-01
off
= 1 mA for
t
f