ssm6k24fe TOSHIBA Semiconductor CORPORATION, ssm6k24fe Datasheet
ssm6k24fe
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ssm6k24fe Summary of contents
Page 1
... V V GSS 500 mW (Note 1) °C T 150 ch −55~150 °C T stg 2 ) Equivalent Circuit (top view SSM6K24FE Unit: mm 1.6±0.05 1.2±0. 1,2,5,6 :Drain 3 :Gate 4 :Source ES6 JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3.0 mg (typ.) 2007-11-01 ...
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... 0~2 4.7 Ω off ( OUT (c) V OUT V DD requires a higher voltage than V GS (on) < V < (off (on) 2 SSM6K24FE Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 30 ⎯ ⎯ 18 ⎯ ⎯ 1 ⎯ 0.5 1.1 ⎯ (Note2) 1.0 2.0 ⎯ (Note2) 120 145 ⎯ ...
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... Ambient temperature Ta (°C) 10000 1.6 1000 100 VGS=1. 0.1 0.01 0.8 1 400 350 300 250 200 150 100 50 0.8 0.6 0.4 0.2 3 SSM6K24FE ID - VGS Ta=100°C 25°C -25°C Common Source VDS= Gate-Source voltage VGS (V) RDS(ON) - VGS Common Source ID=500mA 25°C Ta=100° ...
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... Ciss 100 10 Coss Crss 1 100 140 160 4 SSM6K24FE IDR - VDS Common Source VGS=0V Ta=25°C D IDR G S -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 ~ 2.5V Ta=25°C toff tf ton tr 100 1000 Drain current ID (mA) ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6K24FE 20070701-EN GENERAL 2007-11-01 ...