ssm6p15fe TOSHIBA Semiconductor CORPORATION, ssm6p15fe Datasheet

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ssm6p15fe

Manufacturer Part Number
ssm6p15fe
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
Note 1: Total rating, mounted on FR4 board
Small package
Low ON resistance : R
6
1
D Q
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm
Characteristics
5
2
0.3 mm
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
4
3
: R
DC
Pulse
on
on
= 12 Ω (max) (@V
= 32 Ω (max) (@V
(Ta = 25°C) (Q1, Q2 Common)
SSM6P15FE
P
Symbol
D
V
V
T
I
T
GSS
I
DP
(Note 1)
DS
stg
D
ch
Equivalent Circuit
GS
GS
= −4 V)
= −2.5 V)
−55~150
6
1
Rating
−100
−200
−30
±20
150
150
Q1
1
2
× 6)
5
2
Q2
Unit
mW
mA
°C
°C
V
V
4
3
(top view)
Weight: 0.003g(typ.)
JEDEC
JEITA
TOSHIBA
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
SSM6P15FE
2-2N1D
2007-11-01
Unit: mm

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ssm6p15fe Summary of contents

Page 1

... V V GSS −100 −200 (Note 1) 150 150 °C ch −55~150 T °C stg 2 × 6) Equivalent Circuit SSM6P15FE 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC ― JEITA ― TOSHIBA 2-2N1D Weight: 0.003g(typ.) (top view) 2007-11-01 Unit: mm ...

Page 2

... off ( OUT OUT V requires higher voltage than V GS (on) < V < (off (on) 2 SSM6P15FE MIN. TYP. MAX ⎯ ⎯ ± −30 ⎯ ⎯ ⎯ ⎯ −1 −1.1 ⎯ −1.7 ⎯ ⎯ −4 V ⎯ ...

Page 3

... SSM6P15FE ID - VGS Ta=100°C 25°C -25° Gate-Source Voltage VGS(V) RDS(ON) - VGS Source Common ID= -1mA Ta=100°C 25° -25° Gate-Source Voltage VGS (V) Vth - Ta Common Source ID=-0.1mA VDS=-3V 0 ...

Page 4

... Common Source VGS=0V -200 Ta=25°C -150 -100 -50 0 -1000 0 0.2 Drain-Source voltage VDS (V) 10000 toff 1000 tf Ciss 100 ton Coss tr Crss 10 -0.1 -100 2 ×5) 120 140 160 4 SSM6P15FE IDR - VDS 0.4 0.6 0.8 1 1.2 1 Common Source VDD= -5V VGS=0~-5V Ta=25°C -1 -10 -100 Drain Current ID (mA) 2007-11-01 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6P15FE 20070701-EN GENERAL 2007-11-01 ...

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