ssm3k15f TOSHIBA Semiconductor CORPORATION, ssm3k15f Datasheet - Page 2

• Manufacturer Part Number: ssm3k15f
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Precaution
product. For normal switching operation, V
voltage than V
(relationship can be established as follows: V
V
Please take this into consideration for using the device.
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Test circuit
th
can be expressed as voltage between gate and source when low operating current value is I
5 V
Characteristics
th
0
V
D.U. < = 1%
Input: t
(Z
Common Source
Ta = 25°C
.
DD
out
10 μs
Turn-on time
Turn-off time
= 5 V
= 50 Ω)
r
, t
f
< 5 ns
Input
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⏐Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
Output
R
rss
iss
GS (on)
th
fs
V
L
DD
⏐
GS (off)
requires higher voltage than V
V
I
V
V
V
I
I
V
V
V
V
V
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
< V
= 0.1 mA, V
= 10 mA, V
= 10 mA, V
= 30 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= ±16 V, V
= 5 V, I
= 0~5 V
th
2
OUT
IN
< V
D
D
D
Test Condition
GS (on)
GS
GS
GS
GS
GS
= 0.1 mA
= 10 mA
GS
= 10 mA,
GS
DS
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 4 V
= 2.5 V
= 0
= 0
= 0
)
V
DS (ON)
V
5 V
DD
0 V
th
and V
Min
t
0.8
30
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
on
10%
GS
t
r
(off) requires lower
10%
90%
Typ.
180
2.2
4.0
7.8
3.6
8.8
50
⎯
⎯
⎯
⎯
⎯
D
SSM3K15F
= 100 μA for this
t
2007-11-01
90%
off
Max
1.5
4.0
7.0
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
t
f
Unit
mS
μA
μA
pF
pF
pF
ns
Ω
V
V