ssm3k333r TOSHIBA Semiconductor CORPORATION, ssm3k333r Datasheet
ssm3k333r
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ssm3k333r Summary of contents
Page 1
... (Note1 (Note 10s 2 °C T 150 ch −55 to 150 °C T stg 2 ) Equivalent Circuit (top view SSM3K333R Unit: mm +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0. 0.95 0.95 2.9±0 Gate 2. Source 3. Drain SOT-23F JEDEC ― JEITA ― TOSHIBA 2-3Z1A Weight (typ.) 2010-11-17 ...
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... V DD Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3K333R). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate–source voltage V 100 Common Source Ta = 25°C Pulse test 50 4 − 25 ° 2.5 2.0 1.5 1.0 0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM3K333R I – °C − 25 °C 2.0 3.0 4.0 ( – (ON Drain current I ( – Ta ...
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... Mounted on FR4 board b (25.4mm × 25.4mm × 1 Pad : 0.72 mm 1200 a a 800 b 400 ×3) 0 -40 100 1000 4 SSM3K333R C – iss C oss C rss 1 10 Drain–source voltage V (V) DS Dynamic Input Characteristic Total Gate Charge Qg (nC) P – ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K333R 2010-11-17 ...