ssm3j01f TOSHIBA Semiconductor CORPORATION, ssm3j01f Datasheet
ssm3j01f
Manufacturer Part Number
ssm3j01f
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM3J01F.pdf
(5 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SSM3J01F
Manufacturer:
SILICON
Quantity:
30 000
Part Number:
SSM3J01F
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Speed Switching Applications
•
•
•
Absolute Maximum Ratings
Marking
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Small package
Low on resistance : Ron = 0.4 Ω (max) (V
Low gate threshold voltage
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
: Ron = 0.6 Ω (max) (V
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
DC
Pulse
(Ta = 25°C)
Symbol
SSM3J01F
V
V
T
I
T
P
GSS
I
DP
DS
stg
D
ch
D
GS
GS
= −4 V)
= −2.5 V)
−55~150
Rating
−1400
−700
−30
±10
200
150
1
Equivalent Circuit
Unit
mW
mA
°C
°C
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-236MOD
SSM3J01F
2-3F1F
SC-59
2007-11-01
Unit: mm
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ssm3j01f Summary of contents
Page 1
... SSM3J01F = − −2 (Ta = 25°C) Symbol Rating Unit − ± GSS −700 −1400 200 150 °C ch −55~150 T °C stg Equivalent Circuit 1 SSM3J01F Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) 2007-11-01 ...
Page 2
... −0 0~−2 4.7 Ω off requires higher voltage than V GS (ON) < V < (off (ON) 2 SSM3J01F Min Typ. Max ⎯ ⎯ ±1 −30 ⎯ ⎯ ⎯ ⎯ −1 −0.6 ⎯ −1.1 ⎯ ⎯ 1.0 ⎯ ...
Page 3
... SSM3J01F 2007-11-01 ...
Page 4
... Figure 1 25.4 mm × 25.4 mm × 1 pad of 0 SSM3J01F 2 area) 2007-11-01 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J01F 20070701-EN GENERAL 2007-11-01 ...