ssm3j09fu TOSHIBA Semiconductor CORPORATION, ssm3j09fu Datasheet

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ssm3j09fu

Manufacturer Part Number
ssm3j09fu
Description
Toshiba Field Effect Transistor Silicon P Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Management Switch
High Speed Switching Applications
Absolute Maximum Ratings
Marking
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Small package
Low on resistance : R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
Note:
Note 1: Mounted on FR4 board
1
D K
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
Characteristics
3
: R
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2
on
on
= 2.7 Ω (max) (@V
= 4.2 Ω (max) (@V
Pulse
DC
Equivalent Circuit
(top view)
(Ta = 25°C)
SSM3J09FU
P
D
Symbol
V
V
(Note 1)
T
1
I
T
GSS
I
DP
DS
stg
D
ch
GS
GS
= −10 V)
= −4 V)
3
−55~150
Rating
−200
−400
2
−30
±20
150
150
1
× 3) Figure 1.
2
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Unit
mW
mA
°C
°C
V
V
Cu Pad: 0.6 mm
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
0.6 mm
1.0 mm
SSM3J09FU
2-2E1E
SC-70
2007-11-01
2
× 3
Unit: mm

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ssm3j09fu Summary of contents

Page 1

... (Note 1) 150 D T 150 ch −55~150 T stg 2 × 3) Figure 1. Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Equivalent Circuit (top view SSM3J09FU Unit °C JEDEC ― °C JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ Pad: 0.6 mm 0.6 mm 1.0 mm 2007-11-01 Unit: mm × 3 ...

Page 2

... off ( Output (c) V OUT V DD requires higher voltage than V GS (on) < V < (off (on) 2 SSM3J09FU Min Typ. Max ⎯ ⎯ ±1 −30 ⎯ ⎯ ⎯ ⎯ −1 −1.1 ⎯ −1.8 ⎯ ⎯ (Note2) 115 ⎯ ...

Page 3

... Common Source −5 V 500 Ta = 25°C 300 100 −10 125 150 3 SSM3J09FU R – (ON) D Common Source Ta = 25° −3.3 V −4 V −10 V −200 −300 −400 −500 Drain current I D (mA) R – (ON) GS Common Source − ...

Page 4

... Drain-Source voltage V DS (V) 5000 1000 t off C iss t f 100 C oss rss 10 −100 −1 140 160 4 SSM3J09FU I – 0.4 0.6 0.8 1 1.2 1.4 t – Common Source − 0~− 25°C −10 −100 −1000 Drain current I D (mA) ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3J09FU 20070701-EN GENERAL 2007-11-01 ...

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