74AUP1G14GW,125 NXP Semiconductors, 74AUP1G14GW,125 Datasheet
74AUP1G14GW,125
Specifications of 74AUP1G14GW,125
935279022125
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74AUP1G14GW,125 Summary of contents
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Low-power Schmitt trigger inverter Rev. 4 — 13 July 2010 1. General description The 74AUP1G14 provides a single inverting Schmitt trigger which accepts standard input signals capable of transforming slowly changing input signals into sharply defined, jitter-free ...
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... NXP Semiconductors 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name −40 °C to +125 °C 74AUP1G14GW −40 °C to +125 °C 74AUP1G14GM −40 °C to +125 °C 74AUP1G14GF −40 °C to +125 °C 74AUP1G14GN −40 °C to +125 °C 74AUP1G14GS 5. Marking Table 2. Marking ...
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... NXP Semiconductors 7. Pinning information 7.1 Pinning 74AUP1G14 GND 001aaf121 Fig 4. Pin configuration SOT353-1 7.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 n. GND n. Functional description [1] Table 4. Function table Input [ HIGH voltage level LOW voltage level. 74AUP1G14 Product data sheet 74AUP1G14 n ...
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... NXP Semiconductors 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF ΔI additional power-off leakage OFF current I supply current CC ΔI additional supply current CC C input capacitance ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter ΔI additional power-off leakage OFF current I supply current CC ΔI additional supply current CC = −40 °C to +125 °C T amb V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current ...
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... NXP Semiconductors 12. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see propagation delay see propagation delay see propagation delay see 74AUP1G14 Product data sheet Figure [2] Figure ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [ the same as t and PLH PHL [ used to determine the dynamic power dissipation (P PD × ...
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... NXP Semiconductors Test data is given in Table Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 8. Load circuitry for switching times Table 10. ...
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... NXP Semiconductors Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter V hysteresis voltage H = −40 °C to +85 °C T amb V positive-going T+ threshold voltage V negative-going T− threshold voltage V hysteresis voltage H = −40 °C to +125 °C T amb V positive-going T+ threshold voltage ...
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... NXP Semiconductors Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter V negative-going T− threshold voltage V hysteresis voltage H 15. Waveforms transfer characteristics T− Fig 9. Transfer characteristic 74AUP1G14 Product data sheet …continued Conditions see Figure 9 and Figure ...
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... NXP Semiconductors Fig 11. Typical transfer characteristics; V Fig 12. Typical transfer characteristics; V 16. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula additional power dissipation (μW input frequency (MHz input rise time (ns ...
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... NXP Semiconductors Average I An example of a relaxation circuit using the 74AUP1G14 is shown in (1) Positive-going edge (2) Negative-going edge. Fig 13. Average function ≈ ---------------- - f = × Average values for variable a are given in Fig 14. Relaxation oscillator Table 12. Variable values Supply voltage 1.1 V 1.5 V 1.8 V 2.8 V 3.3 V ...
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... NXP Semiconductors 17. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 15 ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. 6× (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 6× (1) terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION IEC SOT891 Fig 17 ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 0.95 mm nom 0.15 0.90 min 0.12 0.85 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
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... NXP Semiconductors XSON6: extremely thin small outline package; no leads; 6 terminals; body 1.0 x 1 (6×) terminal 1 index area Dimensions (1) Unit max 0.35 0.04 0.20 1.05 mm nom 0.15 1.00 min 0.12 0.95 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. ...
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... NXP Semiconductors 18. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 19. Revision history Table 14. Revision history Document ID Release date 74AUP1G14 v.4 20100713 • Modifications: Added type number 74AUP1G14GN (SOT1115/XSON6 package). ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 21. Contact information For more information, please visit: For sales office addresses, please send an email to: 74AUP1G14 Product data sheet 20 ...
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... NXP Semiconductors 22. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Functional description . . . . . . . . . . . . . . . . . . . 3 9 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 13 Waveforms ...