hn58c1001t-15e Renesas Electronics Corporation., hn58c1001t-15e Datasheet - Page 22

• Manufacturer Part Number: hn58c1001t-15e
• Description: Memory>eeprom>parallel Eeprom
• Manufacturer: Renesas Electronics Corporation.

Revision History
Rev. Date
0.0
1.0
2.0
3.0
4.0
5.0
Jul. 11. 1991
Jan. 10. 1992
Jan. 21. 1993
Apr. 23. 1993
Nov. 25. 1994
May. 23. 1995
Contents of Modification
Page
5
6
16
8
6
14
6
6
11
Description
Initial issue
Recommended DC Operating Conditions
DC Characteristics
AC Characteristics
Functional Description
Change of Timing Waveforms
Deletion of HN58C1001-12
AC Characteristics
Deletion of Mode Description
Addition of Reset function
Change of erase/write cycles in page mode: 10
Change of erase/write cycles in byte mode: 104 to 10
Addition of Toggle Bit
Capacitance
AC Characteristics
Page write timing waveform
Deletion of HN58C1001R series (TFP-32DAR)
Addition of V
I
I
V
V
Change of Test Conditions
t
t
t
t
Deletion of Write Protection (2)
Data Protection 2:
Deletion of protection of mistake
Software data protection
t
Addition of note 1
Write cycle: Addition of note 2,3
Addition of t
Addition of note 1
CC3
CC3
DL
BLC
WP
CS
DH
IH
H
Reference level: 1.8 V to 2.0 V
during programming because to during
programming and read because
unprogrammable, standby or readout state to
unprogrammable state
by CE = V
WE = V
Address: AAAA to AAAA or 2AAA
/t
/t
min: V
min: 200 ns to 300 ns
min: 0 ns to 10 ns
max: V
CH
min: 0.35 s to 0.55 s
max: 40 mA to 50 mA
test: Cycle = 200 ns to Cycle = 150 ns
CW
to t
min: 150 ns to 250 ns
CC
CC
WS
CC
HN58C1001 Series Data Sheet
DW
CC
/t
level at V
H
+ 1 V to V
WH
1.0 V to V
or OE = Low or
min: 150 ns
(CE Controlled)
CC
CC
CC
on/off
+ 0.3 V
0.5 V
5
to 10
3
4