hn58c1001t-15e Renesas Electronics Corporation., hn58c1001t-15e Datasheet - Page 5

• Manufacturer Part Number: hn58c1001t-15e
• Description: Memory>eeprom>parallel Eeprom
• Manufacturer: Renesas Electronics Corporation.

HN58C1001 Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Standby V
Operating V
Output low voltage
Output high voltage
Notes: 1. I
Capacitance
Parameter
Input capacitance*
Output capacitance*
Note:
Rev.8.00, Nov. 27.2003, page 5 of 21
1. This parameter is periodically sampled and not 100
CC
CC
LI
current
on RES: 100 A (max)
current
(Ta = +25 C, f = 1 MHz)
1
1
(Ta = 0 to +70 C, V
Symbol
I
I
I
I
I
V
V
LI
LO
CC1
CC2
CC3
OL
OH
Symbol
Cin
Cout
Min
2.4
CC
= 5.0V ± 10 )
Typ
Min
Max
2*
2
20
1
15
50
0.4
Typ
1
tested.
Max
6
12
Unit
mA
mA
mA
V
V
A
A
A
Test conditions
V
V
CE = V
CE = V
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns, V
I
I
OL
OH
CC
CC
= 2.1 mA
Unit
pF
pF
= –400 A
= 5.5 V, Vin =5.5 V
= 5.5 V, Vout = 5.5/0.4 V
CC
IH
Test conditions
Vin = 0 V
Vout = 0 V
CC
= 5.5 V
CC
= 5.5 V