ixfn180n06 IXYS Corporation, ixfn180n06 Datasheet
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ixfn180n06
Manufacturer Part Number
ixfn180n06
Description
Hiperfettm Power Mosfets N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr
Manufacturer
IXYS Corporation
Datasheet
1.IXFN180N06.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN180N06
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
DM
AR
D25
L(RMS)
GSS
DSS
J
JM
stg
DSS
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS (th)
DS(on)
d
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
V
T
T
Continuous
Transient
T
Terminal current limit
T
T
T
T
I
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
GS
DS
GS
GS
GS
DS
C
C
C
C
J
J
C
J
C
= 25°C; Chip capability
= 25°C to 150°C
= 25°C to 150°C; R
= 10 V, I
= 0 V
Test Conditions
Test Conditions
= 0.8 • V
= V
= ±20 V
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
£ 1 mA
= 0 V, I
DM
GS
, di/dt £ 100 A/ms, V
, I
TM
D
DC
D
D
DSS
= 8 mA
= 1 mA
= 0.5 • I
, V
T
G
DS
J
= 2 W
= 125°C
= 0
D25
GS
= 1 MW
DD
t = 1 min
t = 1 s
£ V
T
DSS
J
(T
JM
200N06/200N07
180N07
N06
N07
= 25°C
200N06/200N07
,
rr
J
= 25°C, unless otherwise specified)
180N07
N07
N06
N07
N06
min.
60
70
Characteristic Values
IXFN 200 N06
IXFN 180 N07
IXFN 200 N07
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
2500
3000
±20
±30
200
180
100
600
100
520
150
30
30
5
70
60
70
60
2
max.
±200
400
4
2 mA
6 mW
7 mW
V/ns
mJ
V~
V~
nA
mA
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
V
V
V
J
g
miniBLOC, SOT-227 B (IXFN)
Features
• International standard packages
• miniBLOC with Aluminium nitride
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
60 V
70 V
70 V
V
isolation
rated
power supplies
DSS
E153432
t
DS (on)
rr
£ 250 ns
G
200 A
180 A
200 A
HDMOS
I
D25
S
D = Drain
D
TM
process
6 mW
7 mW
6 mW
S
97533A (9/99)
R
DS(on)
1 - 4
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ixfn180n06 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150° DGR Continuous GS ...
Page 2
Symbol Test Conditions 0.5 • pulse test D25 C iss MHz oss rss ...
Page 3
150 125 100 0.0 0.5 1 Volts DS Figure 1. Output Characteristics at 25 600 V > DS(ON) 500 400 ...
Page 4
V = 40V 38A 1mA 100 200 300 400 500 Gate Charge - nCoulombs Figure 7. Gate Charge 12000 10000 Ciss 8000 6000 ...