tea5764hn-n2 NXP Semiconductors, tea5764hn-n2 Datasheet - Page 3
tea5764hn-n2
Manufacturer Part Number
tea5764hn-n2
Description
Fm Radio + Rds
Manufacturer
NXP Semiconductors
Datasheet
1.TEA5764HN-N2.pdf
(64 pages)
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Philips Semiconductors
Table 1:
The listed parameters are valid when a crystal is used that meets the requirements as stated in
are defined in potential difference, except when EMF is explicitly stated.
[1]
5. Ordering information
Table 2:
TEA5764HN_2
Product data sheet
Symbol
V
(S+N)/N(m) maximum signal-to-noise
(S+N)/N(s)
THD
V
Type number
TEA5764HN
cs
VAFR
sens
Low-side and high-side selectivity can be measured by changing the mixer LO injection from high-side to low-side.
Electrical parameters general
Ordering information
Parameter
right audio output voltage
on pin VAFR
ratio, mono
maximum signal-to-noise
ratio, stereo
channel separation
total harmonic distortion
RDS sensitivity EMF
value
Package
Name
HVQFN40
Description
plastic thermal enhanced very thin quad flat package; body
6
6
Conditions
V
f
TC
V
f
B
filter
V
f
de-emphasis = 75 s; B
to 15 kHz; A-weighting filter
MST = 0; R = 1 and L = 0 or R = 0
and L = 1; V
RF input level
V
f
to 15 kHz; A-weighting filter; mono;
L = R; no pilot deviation
SYM1 = 0 and SYM0 = 0; average
over 2000 blocks; block quality
rate
mod
mod
mod
mod
f = 22.5 kHz; f
RF
RF
AF
RF
RF
deem
0.9 mm
= 300 Hz to 15 kHz; A-weighting
= 1 mV; L = R; f = 22.5 kHz;
= 1 mV; f = 22.5 kHz; L = R;
= 1 mV; f = 67.5 kHz; L = R;
= 1 mV; f = 75 kHz;
= 1 kHz; no pre-emphasis;
= 1 kHz; de-emphasis = 75 s;
= 1 kHz; f
= 1 kHz; DTC = 0; B
95 %; f
= 75 s
Rev. 02 — 9 August 2005
RF
RDS
= 30 V; increasing
AF
pilot
= 1 kHz; L = R;
= 2 kHz
= 6.75 kHz;
AF
aud
= 300 Hz
= 300 Hz
Min
55
54
50
27
-
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Table
TEA5764HN
Typ
66
57
54
33
0.4
15
47; All RF input values
Max
75
-
-
-
0.9
26
FM radio + RDS
Version
SOT618-1
Unit
mV
dB
dB
dB
%
V
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