bcm857bv NXP Semiconductors, bcm857bv Datasheet - Page 3

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bcm857bv

Manufacturer Part Number
bcm857bv
Description
Pnp/pnp Matched Double Transistors
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
5. Limiting values
6. Thermal characteristics
BCM857BV_BS_DS_5
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
Symbol
Per transistor
V
V
V
I
I
P
Per device
P
T
T
T
Symbol
Per transistor
R
C
CM
j
amb
stg
CBO
CEO
EBO
tot
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
SOT666
SOT363
SOT457
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
SOT666
SOT363
SOT457
SOT666
SOT363
SOT457
Rev. 05 — 27 June 2006
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
1 ms
25 C
25 C
PNP/PNP matched double transistors
BCM857BV/BS/DS
[1][2]
[1]
[1]
[1][2]
[1][2]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
Max
200
200
250
300
300
380
150
+150
+150
50
45
5
100
200
Max
625
625
500
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
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