std16ne10 STMicroelectronics, std16ne10 Datasheet

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std16ne10

Manufacturer Part Number
std16ne10
Description
N - Channel 100v - 0.07ohm - 16a - Ipak/dpak Stripfet Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
STD16NE10
Manufacturer:
ST
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std16ne10-TR
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Part Number:
std16ne10L
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std16ne10L
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Part Number:
std16ne10LT4
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Part Number:
std16ne10T4
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0
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size ”
strip-based
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
July 1998
ST D16NE10
Symbol
dv/dt(
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DC MOTOR CONTROL (DISK DRIVERS,etc.)
DC-DC & DC-ACCONVERTERS
SYNCHRONOUS RECTIFICATION
I
V
DM
V
V
P
T
DGR
I
I
T
DS
GS
stg
D
D
t ot
TYPE
( )
j
1
)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating F actor
Peak Diode Recovery voltage slope
Storage T emperature
Max. O perating Junction Temperature
process.The
DS(on)
100 V
V
N - CHANNEL 100V - 0.07 - 16A - IPAK/DPAK
= 0.07
DSS
resulting
< 0.1
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
transistor
c
c
16 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
INTERNAL SCHEMATIC DIAGRAM
16 A, di/dt
(Suffix ”-1”)
STripFET
TO-251
IPAK
200 A/ s, V
-65 to 175
1
Value
0.33
100
100
175
STD16NE10
2
16
11
64
50
DD
7
20
3
V
(BR)DSS
MOSFET
(Suffix ”T4”)
, T
TO-252
DPAK
j
T
JMAX
1
W/
Uni t
V/ ns
3
o
o
W
V
V
V
A
A
A
C
C
o
C
1/9

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std16ne10 Summary of contents

Page 1

... STripFET IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM transistor Value 100 -65 to 175 ( ) di/dt 200 STD16NE10 MOSFET DPAK TO-252 (Suffix ”T4”) Uni t 100 V 100 0.33 W/ ...

Page 2

... STD16NE10 THERMAL DATA R Thermal Resistance Junction-case t hj-ca se Thermal Resistance Junction-ambient Rthj -amb R Thermal Resistance Case-sink thc Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symb ol Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy ...

Page 3

... D GS Test Cond ition s Min =4 Test Cond ition s Min di/dt = 100 150 C j Thermal Impedance STD16NE10 Typ . Max Typ . Max ...

Page 4

... STD16NE10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STD16NE10 Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STD16NE10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... L1 0 inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.012 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 1 0.031 STD16NE10 MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 0068771-E 7/9 ...

Page 8

... STD16NE10 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4.4 H 9.35 L2 0.8 L4 0.6 DETAIL ”A” 8/9 MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 H DETAIL ”A” L4 inch TYP. MAX. 0.094 0.043 ...

Page 9

... The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. STD16NE10 . 9/9 ...

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