std16ne10 STMicroelectronics, std16ne10 Datasheet - Page 2

• Manufacturer Part Number: std16ne10
• Description: N - Channel 100v - 0.07ohm - 16a - Ipak/dpak Stripfet Mosfet
• Manufacturer: STMicroelectronics

STD16NE10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/9
Symb ol
Symb ol
V
Symb ol
Symb ol
R
R
Rthj -amb
R
V
g
(BR)DSS
I
t hj-ca se
thc- si nk
C
I
I
C
E
DS( on)
D(o n)
C
GS(th)
fs
I
DSS
GSS
T
AR
oss
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero G ate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
o
V
V
V
V
V
V
AR
Parameter
max,
D
C
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= Max Rating
= Max Rating
> I
= 10 V
> I
=
= 10V
case
DD
D(on)
D(on)
GS
< 1%)
20 V
= 30 V)
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
x R
x R
I
I
D
D
f = 1 MHz
V
o
= 250 A
= 8 A
DS(on) max
DS(on) max
C unless otherwise specified)
GS
= 0
Max
Max
Typ
T
V
I
c
GS
D
= 125
=8 A
= 0
Min.
Min.
Min.
100
16
2
5
100
275
Max Valu e
3.0
1.5
1600
Typ .
Typ .
Typ .
0.07
180
50
16
75
3
2100
Max.
Max.
Max.
250
0.1
10
70
100
1
4
oC/W
o
o
Un it
Un it
Un it
Unit
C/W
C/W
mJ
nA
pF
pF
pF
o
V
V
A
S
A
C
A
A