lrs1331 Sharp Microelectronics of the Americas, lrs1331 Datasheet - Page 11

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lrs1331

Manufacturer Part Number
lrs1331
Description
Stacked Chip Flash Memory Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet

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Stacked Chip (16M Flash & 4M SRAM)
FLASH MEMORY AC CHARACTERISTICS
AC Test Conditions
Read Cycle
NOTE: *F-OE may be delayed up to t
Data Sheet
Input pulse level
Input rise and fall time
Input and Output timing reference level
Output load
Read Cycle Time
Address to Output Delay
F-CE to Output Delay*
F-RP HIGH to Output Delay
F-OE to Output Delay*
F-CE to Output in LOW Z
F-CE HIGH to Output in HIGH-Z
F-OE to Output in LOW Z
F-OE HIGH to Output in HIGH-Z
Output Hold from Address, F-CE or F-OE change,
whichever occurs first
T
A
= -25°C to +85°C, V
PARAMETER
PARAMETER
CC
= 2.7 V to 3.6 V
ELQV
- t
GLQV
after the falling edge of F-OE without impact on t
1TTL + C
CONDITION
0 V to 2.7 V
1.35 V
10 ns
L
SYMBOL
(50 pF)
t
t
t
t
t
t
t
t
t
GHQZ
AVQV
PHQV
GLQV
EHQZ
GLQX
AVAV
ELQV
ELQX
t
OH
MIN.
90
0
0
0
ELQV
MAX.
600
90
90
40
40
15
.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
LRS1331
11

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