lrs1331 Sharp Microelectronics of the Americas, lrs1331 Datasheet - Page 18

• Manufacturer Part Number: lrs1331
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

LRS1331
SRAM AC ELECTRICAL CHARACTERISTICS
AC Test Conditions
NOTE: *Including scope and jig capacitance.
Read Cycle
NOTE: *Active output to HIGH impedance and HIGH impedance to output active
Write Cycle
NOTE: *Active output to HIGH impedance and HIGH impedance to output active
18
Input pulse level
Input rise and fall time
Input and Output timing reference level
Output load*
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Output hold from address change
S-CE
S-OE LOW to Output Active*
S-UB or S-LB LOW to Output in HIGH Impedance*
S-CE
HIGH Impedance*
S-OE HIGH to Output in HIGH Impedance*
S-UB or S-LB HIGH to Output Active*
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Input Data Setup Time
Input Data Hold Time
S-WE HIGH to Output Active*
S-WE LOW to Output in HIGH Impedance*
T
T
A
A
1
1
= -25°C to +85°C, V
= -25°C to +85°C, V
, S-CE
, S-CE
tests specified for a ±200 mV transition from steady state levels into the test load.
tests specified for a ±200 mV transition from steady state levels into the test load.
2
2
PARAMETER
PARAMETER
LOW to Output Active*
HIGH to Output in
PARAMETER
CC
CC
= 2.7 V to 3.6 V
= 2.7 V to 3.6 V
SYMBOL
t
t
t
t
t
t
t
t
t
t
WC
CW
AW
WP
WR
DW
OW
1TTL + C
DH
WZ
AS
S-CE
S-CE
S-CE
S-CE
S-CE
S-CE
0.6 V to 2.2 V
CONDITION
1.5 V
1
2
1
2
1
2
5 ns
L
(30 pF)
SYMBOL
MIN.
85
70
70
60
35
0
0
0
5
0
t
t
H
t
t
t
ACE1
ACE2
t
t
t
t
t
t
t
t
OHZ
BHZ
OLZ
BLZ
HZ1
LZ1
LZ2
OH
RC
AA
OE
HZ2
MAX.
25
MIN.
85
10
10
10
Stacked Chip (16M Flash & 4M SRAM)
5
5
0
0
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MAX.
85
85
85
45
25
25
25
25
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Sheet