lrs1331 Sharp Microelectronics of the Americas, lrs1331 Datasheet - Page 4

• Manufacturer Part Number: lrs1331
• Description: Stacked Chip Flash Memory Sram
• Manufacturer: Sharp Microelectronics of the Americas

LRS1331
NOTES:
1. L = V
2. Refer to the ‘Flash Memory Command Definition’ section for valid
3. F-WP set to V
4. SRAM standby data. See Table 2a.
4
Read
Output Disable
Write
Standby
Reset
Standby
Reset
address input and D
Standby
(SRAM)
MODE
FLASH
IL
, H = V
IH
IL
, X = H or L. Refer to DC Characteristics.
or V
S-CE
H
X
X
Standby
Standby
Standby
Read
Output
Disable
Write
Read
Output
Disable
Write
Standby
Standby
SRAM
IN
IH
.
1
during a write operation.
Table 2a.
S-CE
F-CE F-RP
H
H
H
H
H
X
X
L
L
L
X
X
X
X
X
L
2
PINS
H
H
H
H
H
H
H
H
L
L
L
L
L
S-LB
X
X
H
F-OE
H
H
X
X
X
X
X
X
X
X
X
X
L
F-WE
Table 2. Truth Table
H
H
X
X
X
X
X
X
X
X
X
X
L
S-UB
H
X
X
S-CE
See Note 4
See Note 4
L
L
L
L
L
L
L
L
1
S-CE
5. Command writes involving block erase or word write are reliably
6. Never hold F-OE LOW and F-WE LOW at the same timing.
7. S-LB, S-UB Control Mode. See Table 2b.
H
H
H
H
H
H
H
H
executed when V
3.6 V. Block erase or word write with F-V
produce spurious results and should not be attempted.
2
Read/Write
(SRAM)
MODE
S-OE S-WE S-LB
1
X
X
X
H
X
H
X
X
X
L
L
L
L
Stacked Chip (16M Flash & 4M SRAM)
H
H
H
H
X
X
X
X
X
X
X
L
L
S-LB
CCWH
H
L
L
See Note 4
See Note 4
X
H
X
H
(2.7 V to 3.6 V) and F-V
Table 2b.
S-UB
S-UB
See Note 7
See Note 7
See Note 7
X
H
X
H
H
L
L
DQ
DQ
PINS
DQ
HIGH-Z
HIGH-Z
HIGH-Z
HIGH-Z
HIGH-Z
HIGH-Z
HIGH-Z
D
D
0
7
HIGH-Z
D
-
OUT
OUT
D
OUT
0
IN
CCW
- DQ
DQ
DQ
/D
/D
IN
IN
8
15
< V
7
-
Data Sheet
CC
CCWH
DQ
D
D
2, 3, 5, 6
NOTES
HIGH-Z
= 2.7 V to
OUT
OUT
8
2, 3
3
3
3
- DQ
(MIN.)
/D
/D
IN
IN
15