k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 11

• Manufacturer Part Number: k4t51163qi-hpf7
• Description: 512mb I-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

7.6 Differential input AC logic Level
Note :
1. V
2. The typical value of V
3. For information related to V
7.7 Differential AC output parameters
Note :
1. The typical value of V
V
8.0 ODT DC electrical characteristics
Note :
1. Test condition for Rtt measurements
Measurement Definition for Rtt(eff) : Apply V
Measurement Definition for VM: Measure voltage (V
K4T51163QI
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to V
OX
and V
indicates the voltage at which differential input signals must cross.
tude allowed for overshoot and undershoot.
ID
(AC) indicates the voltage at which differential output signals must cross.
Symbol
Symbol
V
V
V
(AC) specifies the input differential voltage |V
OX
ID(AC)
IX(AC)
CP
(AC)
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
AC differential cross point voltage
IX
OX
(AC) is expected to be about 0.5 * V
AC differential cross point voltage
(AC) is expected to be about 0.5 * V
PARAMETER/CONDITION
PEAK
AC differential input voltage
V
DDQ
V
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
CP
TR
V
/2
IH
delta V
Parameter
Parameter
(ac), V
Rtt(eff) =
IH
M
IL
(ac) and V
=
(ac), and V
TR
M
I(
-V
) at test pin (midpoint) with no load.
V
< Differential signal levels >
V
2 x Vm
V
IH
CP
IH
DDQ
(ac)
(ac)
IL
| required for switching, where V
(ac) to test pin separately, then measure current I(V
DDQ
) - I(
DDQ
-
V
values defined in SSTL_18
IL
V
DDQ
- 1
of the transmitting device and V
(ac)
IL
V
V
(ac)
11 of 42
DDQ
SSQ
V
of the transmitting device and V
ID
x 100%
)
0.5 * V
0.5 * V
DDQ
Min.
DDQ
Min.
0.5
SYMBOL
delta VM
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
- 0.175
- 0.125
TR
V
is the true input signal (such as CK, DQS, LDQS or UDQS)
IX or
IX
(AC) is expected to track variations in V
Crossing point
Industrial
V
MIN
120
OX
60
40
- 6
OX
0.5 * V
0.5 * V
(AC) is expected to track variations in V
DDQ
Max.
V
DDQ
IH
Max.
NOM
DDQ
150
75
50
(ac)) and I( V
+ 0.175
IH
+ 0.125
(AC) - V
Rev. 1.0 August 2009
DDR2 SDRAM
MAX
180
+ 6
90
60
IL
IL
(AC).
(ac)) respectively.
UNITS
Units
Units
ohm
ohm
ohm
V
V
V
%
DDQ
NOTES
. V
Notes
Note
IX
1
1
1
1
1
2
1
DDQ
(AC)
.