k4t51163qi-hpf7 Samsung Semiconductor, Inc., k4t51163qi-hpf7 Datasheet - Page 36

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k4t51163qi-hpf7

Manufacturer Part Number
k4t51163qi-hpf7
Description
512mb I-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K4T51163QI
Hold Slew Rate
V
V
V
V
Rising Signal
V
V
IL(dc)
IL(ac)
DDQ
REF(dc)
IH(ac)
IH(dc)
CK
CK
max
max
min
min
V
SS
=
dc to V
dc to V
region
region
tangent line [ V
Figure 16 - Illustration of tangent line for tIH
REF
REF
∆TR
tIS
tangent
REF(dc)
line
Hold Slew Rate
36 of 42
Falling Signal
- Vil(dc)max ]
tIH
∆TR
=
nominal
tangent line [ Vih(dc)min - V
line
tIS
tangent
∆TF
line
Industrial
tIH
∆TF
nominal
line
REF(dc)
Rev. 1.0 August 2009
DDR2 SDRAM
]

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