mt18hts25672pky Micron Semiconductor Products, mt18hts25672pky Datasheet - Page 2

• Manufacturer Part Number: mt18hts25672pky
• Description: Ddr2 Sdram Mini-rdimm
• Manufacturer: Micron Semiconductor Products

Table 2: Addressing
Table 3: Part Numbers and Timing Parameters – 2GB
Base Device: MT47H256M8THN,
Table 4: Part Numbers and Timing Parameters – 4GB
Base Device: MT47H512M8THM,
PDF: 09005aef82218d23
hts18c256_512x72pky.pdf - Rev. C 3/10 EN
Parameter
Refresh count
Row address
Device bank address
TwinDie device configuration
Column address
Module rank address
Part Number
MT18HTS25672PK(I)Y-80E__
MT18HTS25672PK(I)Y-667__
Part Number
MT18HTS51272PK(I)Y-80E__
MT18HTS51272PK(I)Y-667__
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con-
sult factory for current revision codes. Example: MT18HTS25672PKY-667E1.
2
2
1
1
2Gb TwinDie DDR2 SDRAM
4Gb TwinDie DDR2 SDRAM
Module
Density
Module
Density
2GB
2GB
4GB
4GB
Configuration
Configuration
256 Meg x 72
256 Meg x 72
512 Meg x 72
512 Meg x 72
2GB, 4GB (x72, DR) 244-Pin DDR2 Mini-RDIMM
2Gb TwinDie (256 Meg x 8)
2
16K A[13:0]
8 BA[2:0]
1K A[9:0]
2 S#[1:0]
2GB
8K
Bandwidth
Bandwidth
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Module
Module
6.4 GB/s
5.3 GB/s
6.4 GB/s
5.3 GB/s
Memory Clock/
Memory Clock/
3.0ns/667 MT/s
3.0ns/667 MT/s
2.5ns/800MT/s
2.5ns/800MT/s
Data Rate
Data Rate
4Gb TwinDie (512 Meg x 8)
© 2006 Micron Technology, Inc. All rights reserved.
32K A[14:0]
8 BA[2:0]
1K A[9:0]
2 S#[1:0]
4GB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
Features
t
t
5-5-5
5-5-5
5-5-5
5-5-5
RCD-
RCD-
t
t
RP)
RP)