mt16hts25664hy-53e Micron Semiconductor Products, mt16hts25664hy-53e Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
mt16hts25664hy-53e
Manufacturer Part Number
mt16hts25664hy-53e
Description
2gb, 4gb X64, Dr 200-pin Ddr2 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT16HTS25664HY-53E.pdf
(11 pages)
Electrical Specifications
Table 7:
Input Capacitance
AC Timing and Operating Conditions
Table 8:
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256_512x64H.fm - Rev. B 10/07 EN
V
Symbol
IN
I
V
VREF
, V
Ioz
T
T
DD
I
C
A
I
1
OUT
Absolute Maximum Ratings
Module and Component Speed Grades
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating
temperature
REF
REF
DD
Module Speed Grade
supply voltage relative to V
Notes:
input 0V ≤ V
leakage current; V
2
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. The refresh rate is required to double when 85°C < T
2. For further information, refer to technical note TN-00-08: “Thermal Applications,” available
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
Recommended AC operating conditions are given in the DDR2 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 8.
-667
-53E
-40E
on Micron’s Web site.
IN
≤ 0.95V (All other pins not under
REF
= valid V
OUT
SS
SS
; DQ and ODT are
REF
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
level
IN
≤ V
DD
7
;
Commercial
Address inputs
RAS#, CAS#, WE#
CK#
DM
DQ, DQS, DQS#
Industrial
Commercial
Industrial
S#, CKE, ODT, CK,
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
C
≤ 95°C.
Electrical Specifications
-37E
-53E
-3
Min
–1.0
–0.5
©2006 Micron Technology, Inc. All rights reserved.
–80
–40
–10
–10
–32
–40
–40
0
0
Max
+2.3
+2.3
+80
+40
+10
+10
+32
+70
+85
+85
+95
Units
µA
µA
µA
°C
°C
°C
°C
V
V