m470l6423ck0 Samsung Semiconductor, Inc., m470l6423ck0 Datasheet - Page 9

• Manufacturer Part Number: m470l6423ck0
• Description: 512mb Ddr Sdram Module 64mx64 Based On Ddp 64mx 8 Ddr Sdram 200pin Sodimm 64bit Non-ecc/parity
• Manufacturer: Samsung Semiconductor, Inc.

AC OPERATING TEST CONDITIONS
Input/Output CAPACITANCE
M470L6423CK0
Input capacitance(A
Input capacitance(CKE
Input capacitance( CS
Input capacitance( CLK
Data & DQS input/output capacitance(DQ
Input capacitance(DM
Input reference voltage for Clock
Input signal maximum peak swing
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
IH
/V
IL
Parameter
)
0
Parameter
~ A
0
0
~DM
0
0
)
)
, CLK
11
, BA
8
)
1
Output
)
0
~ BA
(V
DD
1
,RAS,CAS, WE )
=2.5V, V
Output Load Circuit (SSTL_2)
0
~DQ
(V
DD
Z0=50
63
DDQ
)
C
=2.5V, V
LOAD
=2.5V, T
=25pF
V
tt
DDQ
=0.5*V
A
Symbol
= 25
C
=2.5V, T
V
C
C
C
C
C
OUT
REF
R
IN1
IN2
IN3
IN4
IN5
See Load Circuit
DDQ
T
=50
C
+0.31/V
0.5 * V
, f=1MHz)
200pin DDR SDRAM SODIMM
V
=0.5*V
Value
V
REF
A
1.5
V
= 0 to 70
REF
tt
DDQ
REF
DDQ
Min
-0.31
38
38
36
36
12
12
C
)
Rev. 0.0 Aug. 2001
Max
47
47
44
40
14
14
Unit
V
V
V
V
V
Unit
pF
pF
pF
pF
pF
pF
Note