k4h281638d Samsung Semiconductor, Inc., k4h281638d Datasheet - Page 24
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k4h281638d
Manufacturer Part Number
k4h281638d
Description
128mb D-die X16 Ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H281638D.pdf
(52 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4h281638d-TCA2
Manufacturer:
SAMSUNG
Quantity:
660
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128Mb D-die(x16) DDR SDRAM
3.3.6 Write Interrupted by a Write
tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric-
< Burst Length=4 >
Command
DQS
DQ s
CK
CK
NOP
0
Figure 14. Write interrupted by a write timing
WRITE A
1
1t
CK
WRITE b
Din A
0
2
Din A
- 24 -
1
Din B
NOP
0
3
Din B
1
Din B
NOP
2
4
Din B
3
NOP
5
REV. 0.6 Oct. 21. 2002
NOP
6
NOP
7
NOP
8
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