k4h281638d Samsung Semiconductor, Inc., k4h281638d Datasheet - Page 44
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k4h281638d
Manufacturer Part Number
k4h281638d
Description
128mb D-die X16 Ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4H281638D.pdf
(52 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4h281638d-TCA2
Manufacturer:
SAMSUNG
Quantity:
660
128Mb D-die(x16) DDR SDRAM
8.2.2 Overshoot/Undershoot specification for Data Pins
Parameter
Maximum peak amplitude allowed for overshoot (See Figure 2):
Maximum peak amplitude allowed for undershoot (See Figure 2):
The area between the overshoot signal and VDD must be less than or
equal to (See Figure 2):
The area between the undershoot signal and GND must be less than or
equal to (See Figure 2):
Table 15. Overshoot/Undershoot specification for Data Pins
Notes:
1. This specification is intended for only DDR200, DDR266A and DDR266B devices.
2. This specification is intended for only devices with NO clamp protection
3. This compliance is to be verified by design only.
Figure 25. AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0
Area = 2.5V-ns
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
- 44 -
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
Specification
2.5 V-ns
2.5 V-ns
1.2 V
1.2 V
REV. 0.6 Oct. 21. 2002
Notes
1,2,3
1,2,3
1,2,3
1,2,3