ne851m33-t3 Renesas Electronics Corporation., ne851m33-t3 Datasheet - Page 2

• Manufacturer Part Number: ne851m33-t3
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
100 to 145
FB
E7
Symbol
⏐S
⏐S
h
C
FE
I
I
re
NF
CBO
EBO
f
f
21e
21e
Note 1
T
T
Note 2
⏐
⏐
2
2
μ
A
V
V
V
V
V
V
V
V
Z
V
s, Duty Cycle ≤ 2%
Data Sheet PU10343EJ03V0DS
= +25°C)
S
CB
EB
CE
CE
CE
CE
CE
CE
CB
= Z
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 0.5 V, I
opt
E
C
C
C
C
C
C
C
Test Conditions
= 0 mA
= 0 mA
= 5 mA
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 10 mA, f = 2 GHz,
E
= 0 mA, f = 1 MHz
MIN.
100
3.0
5.0
3.0
4.5
–
–
–
–
TYP.
120
4.5
6.5
4.0
5.5
1.9
0.6
–
–
MAX.
600
600
145
2.5
0.8
–
–
–
–
NE851M33
GHz
GHz
Unit
nA
nA
dB
dB
dB
pF
–