ne851m33-t3 Renesas Electronics Corporation., ne851m33-t3 Datasheet - Page 3

• Manufacturer Part Number: ne851m33-t3
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

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TYPICAL CHARACTERISTICS (T
0.0001
Remark The graphs indicate nominal characteristics.
0.001
0.01
100
250
200
150
100
0.1
130
50
10
60
50
40
30
20
10
0
1
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
CE
1
Collector to Emitter Voltage V
0.5
25
= 1 V
Base to Emitter Voltage V
Ambient Temperature T
2
0.6
50
Mounted on Glass Epoxy PCB
(1.08 cm
400 A
3
μ
360 A
0.7
75
320 A
μ
280 A
2
μ
4
× 1.0 mm (t) )
240 A
μ
100
0.8
μ
A
5
200 A
BE
A
(˚C)
CE
= +25°C, unless otherwise specified)
(V)
I
B
125
μ
0.9
(V)
= 40 A
120 A
160 A
6
80 A
Data Sheet PU10343EJ03V0DS
μ
μ
μ
μ
150
1.0
7
0.0001
0.001
0.01
100
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
0.5
Collector to Base Voltage V
= 2 V
Base to Emitter Voltage V
2
0.6
4
0.7
6
0.8
BE
CB
f = 1 MHz
NE851M33
(V)
8
(V)
0.9
1.0
10
3