ne851m33-t3 Renesas Electronics Corporation., ne851m33-t3 Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
ne851m33-t3
Manufacturer Part Number
ne851m33-t3
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NE851M33-T3.pdf
(9 pages)
Remark The graphs indicate nominal characteristics.
10
35
30
25
20
15
10
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
5
0
0.1
0.1
1
V
I
V
f = 2 GHz
C
CE
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 5 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 1 V
= 1 V
Collector Current I
Frequency f (GHz)
Frequency f (GHz)
MSG
|S
MSG
21e
|S
10
1
1
|
21e
2
MAG
|
MAG MSG
2
MAG
C
MAG
(mA)
MSG
V
I
C
CE
= 15 mA
Data Sheet PU10343EJ03V0DS
= 1 V
100
10
10
10
35
30
25
20
15
10
35
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
5
0
0.1
0.1
1
V
I
V
f = 2 GHz
C
CE
CE
GAIN BANDWIDTH PRODUCT
= 5 mA
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
= 2 V
= 2 V
Collector Current I
Frequency f (GHz)
Frequency f (GHz)
MSG
|S
21e
MSG
|S
10
1
1
|
MAG
21e
2
|
2
MAG
MAG
MAG
C
(mA)
NE851M33
MSG
MSG
V
I
C
CE
= 15 mA
= 2 V
100
5
10
10