tpcp8006 TOSHIBA Semiconductor CORPORATION, tpcp8006 Datasheet - Page 2

• Manufacturer Part Number: tpcp8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: ● on the lower left of the marking indicates Pin 1.
* Weekly code (Three digits):
DD
= 16 V, T
Characteristic
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
= 25°C (initial), L = 0.2 mH, R
(a)
25.4 × 25.4 × 0.8t
R
R
Symbol
th (ch-a)
th (ch-a)
FR-4
Unit: (mm)
G
2
= 25 Ω, I
148.8
Max
74.4
(b) Device mounted on a glass-epoxy board (b)
AR
= 9.1 A
°C/W
°C/W
Unit
(b)
25.4 × 25.4 × 0.8t
TPCP8006
2008-10-22
FR-4
Unit: (mm)