tpcp8005-h TOSHIBA Semiconductor CORPORATION, tpcp8005-h Datasheet - Page 3

• Manufacturer Part Number: tpcp8005-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
Rg
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 11 A, V
(Ta = 25°C)
= ± 20 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
∼ − 24 V, V
∼ − 24 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
GS
= 10 μs
GS
GS
GS
= 1 mA
= 5.5 A
= 5.5 A
DS
= 5.5 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 5 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 5.5 A
DD
D
∼ − 15 V
D
D
= 11 A
= 11 A
= 11 A
V
OUT
Min
Min
1.5
30
15
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1433
Typ.
12.1
Typ.
303
9.8
1.0
3.0
4.0
4.8
3.0
5.0
30
83
10
22
20
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8005-H
2007-12-25
±100
2150
15.7
12.9
−1.2
Max
Max
125
2.5
1.5
10
44
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
Ω
ns
V
V
S
A
V