tpcp8008-h TOSHIBA Semiconductor CORPORATION, tpcp8008-h Datasheet - Page 6

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tpcp8008-h

Manufacturer Part Number
tpcp8008-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
0.01
100
0.1
10
1
0.1
I D max (Pulse) *
* Single pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature.
Drain-source voltage V
1000
100
0.1
10
0.001
Safe operating area
1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
10 ms *
0.01
V DSS max
10
t = 1 ms *
DS
(V)
0.1
100
Pulse width t
r
th
– t
1
6
w
w
(s)
10
100
Single - pulse
(2)
(1)
1000
TPCP8008-H
2010-03-09

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