tpcp8503 TOSHIBA Semiconductor CORPORATION, tpcp8503 Datasheet - Page 4
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tpcp8503
Manufacturer Part Number
tpcp8503
Description
Toshiba Transistor Silicon Npn Triple Diffused Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8503.pdf
(5 pages)
1000
100
10
0.001
1
1000
100
10
1
1
※:Single non-repetitive pulse Ta=25℃
Note that the curves for 100ms*,10s* and
DC operation Will be different when the
devices aren’t mounted on an FR4
board(glass epoxy, 1.6mm thick, Cu area:
645mm
Curves must be de-rated linearly with
increase in temperature.
I C MAX. (PULSE)※
I C MAX.( CONTINUOUS)
2
)
0.01
Collector-emitter voltage V
0.1
10
DC OPERATION *
Safe operating area
Pulse width t
(Ta=25℃)
4
r
th
10 s※*
– t
1
Curves should be applied in thermal limited area.
(Single non-repetitive pulse) Ta=25℃
Mounted on FR4 board
(Cu pad 645mm
w
w
100 ms※*
10 ms※
CE
(s)
100
10
(V)
2
,glass epoxy, t=1.6mm)
1 ms※
100 μs※
100
1000
1000
TPCP8503
2006-11-16