tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 2

• Manufacturer Part Number: tpcp8402
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Thermal resistance,
channel to ambient
(t = 5 s)
Thermal resistance,
channel to ambient
(t = 5 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
Note 4: P Channel: V
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on the lower left of the marking indicates Pin 1.
b) The power dissipation and thermal resistance values shown are for a single device.
※ Weekly code (3 digits):
N Channel: V
(Note 2a) Single-device value at
(Note 2b) Single-device value at
(During single-device operation, power is only applied to one device.)
(During dual operation, power is evenly applied to both devices.)
Characteristics
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
DD
DD
25.4
(a)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= −24 V, T
= 24 V, T
ch
(Note 3a)
(Note 3a)
ch
= 25°C (initial), L = 0.5 mH, R
= 25°C (initial), L = 0.2 mH, R
25.4 × 25.4 × 0.8
R
R
R
R
FR-4
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
(Unit: mm)
Symbol
2
101.6
215.5
347.2
84.5
Max
(b) Device mounted on a glass-epoxy board (b)
G
°C/W
°C/W
G
Unit
= 25 Ω, I
= 25 Ω, I
AR
AR
(b)
= 2.1 A
= −1.7 A
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8402
2006-11-13