tpcp8102 TOSHIBA Semiconductor CORPORATION, tpcp8102 Datasheet - Page 4

• Manufacturer Part Number: tpcp8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos ??
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−12
−10
100
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0.1
0
0
1
−10
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
Ta = −55°C
Drain−source voltage V
Gate−source voltage V
−0.2
−5
Drain current I
−3
−2
−1
−1
−1.8
−1.7
−0.4
25
I
I
100
|Y
D
D
25
fs
– V
– V
| – I
Ta = −55°C
DS
GS
−0.6
D
100
D
−10
−2
GS
(A)
DS
Common source
Ta = 25°C
Pulse test
V GS = −1.3 V
−0.8
(V)
(V)
−1.6
−1.5
−1.4
−100
−1.0
−3
4
100
−10
10
−8
−6
−4
−2
−0.1
1
−10
0
−0.5
−0.4
−0.3
−0.2
−0.1
0
0
0
−1.8
Drain−source voltage V
Gate−source voltage V
−0.4
−5
−4
Drain current I
−3
I D = −7.2A
−1
−2
R
−1.9
−0.8
V
DS (ON)
I
DS
D
−1.8
−8
– V
– V
−3.6
DS
GS
– I
−1.2
D
D
−12
−10
GS
V GS = −2 V
−2.5
−4.5
(A)
DS
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −1.3 V
−1.6
(V)
(V)
−16
TPCP8102
2006-11-17
−1.6
−1.7
−1.5
−1.4
−100
−2.0
−20