tpcp8604 TOSHIBA Semiconductor CORPORATION, tpcp8604 Datasheet - Page 2

• Manufacturer Part Number: tpcp8604
• Description: Toshiba Transistor Silicon Npn Triple Diffused Mesa Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Switching time
Characteristics
Turn-on time
Storage time
Fall time
(Ta = 25°C)
V
V
V
Symbol
h
h
(BR)CEO
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
C
t
t
stg
f
on
t
T
ob
f
V
V
I
V
V
I
I
V
V
I
Duty cycle ≤ 1%
C
C
C
B1
CB
EB
CE
CE
CE
CB
= −10 mA, I
= −100 mA, I
= −100 mA, I
= −10 mA, I
20 μs
= −400 V, I
= −7 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −10 V, I
2
Test Condition
C
C
C
C
B
E
Input
B2
= 0
= −20 mA
= −100 mA
= −50 mA
B
B
E
= 0
= 0, f = 1 MHz
= −10 mA
= −10 mA
= 0
= 20 mA,
I
I
V
B1
B2
CC
= −200 V
Output
−400
140
140
Min
―
―
―
―
―
―
―
―
―
−0.76
Typ.
−0.4
0.2
2.3
0.2
35
18
―
―
―
―
―
TPCP8604
2007-06-07
−1.0
−0.9
Max
−10
450
400
−1
―
―
―
―
―
―
MH
Unit
μA
μA
pF
μs
V
V
V
Z