tpcp8h02 TOSHIBA Semiconductor CORPORATION, tpcp8h02 Datasheet - Page 5

• Manufacturer Part Number: tpcp8h02
• Description: Silicon Npn Epitaxial Type, Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
0.1
10
1
0.1
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
*: Single nonrepetitive pulse
I C max (Pulsed) *
I C max (Continuous)
100 ms*
Ta = 25°C
10 s*
DC operation
Collector−emitter voltage V
2
(Ta = 25°C)
).
1000
100
Safe operating area
10
0.001
1
1
10 ms*
1 ms*
100 μs*
0.01
10
CE
(V)
10 μs*
0.1
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
100
Pulse width t
r
th (j-c)
5
1
– t
w
w
(s)
10
100
2
1000
)
TPCP8H02
2006-11-13