tpcp8902 TOSHIBA Semiconductor CORPORATION, tpcp8902 Datasheet - Page 5

• Manufacturer Part Number: tpcp8902
• Description: Toshiba Transistor Silicon Npn / Pnp Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

NPN
0.03
0.01
1.6
1.2
0.8
0.4
0.3
0.1
1.6
1.2
0.8
0.4
0.001
2
0
1
2
0
0
0
Single nonrepetitive pulse
Base−emitter voltage V
Common emitter
I C /I B = 30
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Collector−emitter voltage V
0.4
20
Ta = 100°C
I B = 1 mA
0.01
Collector current I
0.4
Ta = 100°C
V
0.8
CE (sat)
I
I
C
C
10
– V
0.1
– V
0.8
CE
BE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
– I
1.2
BE
25°C
−55°C
C
25°C
C
−55°C
(V)
CE
(A)
1.2
1
1.6
(V)
3
2
6
5
4
8
10
2
1.6
5
0.01
0.1
10
1000
1
300
100
0.1
10
0.3
0.1
30
10
0.001
3
*: Single nonrepetitive pulse
Note that the curves for 100 ms, 10 s and
DC operation will be different when the
devices aren’t mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu area: 645
mm
Single-device operation
These characteristic curves must be derated
linearly with increase in temperature.
1
0.001
I C max (pulse) *
I C max (pulse) *
I C max (continuous)*
DC operation
Ta = 25°C
2
Ta = 25°C
).
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
I C /I B = 30
Single nonrepetitive pulse
Collector−emitter voltage V
10 s*
0.01
Collector current I
Collector current I
0.01
Safe operating area
1
25°C
100 ms*
−55°C
Ta = -55°C
V
BE (sat)
h
FE
25°C
Ta = 100°C
0.1
0.1
– I
C
– I
C
100°C
C
C
10
TPCP8902
CE
2009-06-11
(A)
(A)
1
1
(V)
100μs*
10μs*
10 ms*
1 ms*
10
100
10