tpcp8aa1 TOSHIBA Semiconductor CORPORATION, tpcp8aa1 Datasheet
tpcp8aa1
Manufacturer Part Number
tpcp8aa1
Description
Silicon N Channel Mos Type U-mos? / Silicon Epitaxial Schottky Barrier Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8AA1.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TPCP8AA1
Manufacturer:
TOSHIBA
Quantity:
3 550
○ DC-DC Converter
•
•
Maximum Ratings
Maximum Ratings
Handling Precaution
Maximum Ratings
Preliminary
Combined Nch MOSFET and Schottky Diode into one Package.
Low R
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Operating temperature
Note 1: Mounted on FR4 board
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
The Channel-to-Ambient thermal resistance R
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm
DS (ON)
Silicon N Channel MOS Type (U-MOSⅡ) / Silicon Epitaxial Schottky Barrier Diode
Characteristics
Characteristics
Characteristics
and Low V
(Ta = 25°C) MOSFET
(Ta = 25°C) MOSFET, DIODE COMMON
Pulse
(Ta = 25°C) SCHOTTKY DIODE
F
DC
I
P
DP
TPCP8AA1
Symbol
Symbol
Symbol
D
V
I
V
V
T
T
T
FSM
V
GSS
I
(Note 2)
(Note 1)
I
(Note 3)
T
DS
RM
stg
opr
O
D
ch
R
j
4 (50 Hz)
Rating
th (ch-a)
2
125
−55~125
−40~100
0.7
)
30
25
Rating
Rating
±12
150
1.6
3.2
1.0
20
1
and the drain power dissipation P
Unit
°C
V
V
A
A
Unit
Unit
°C
°C
°C
W
V
V
A
Weight: mg (typ)
JEDEC
JEITA
TOSHIBA
1:Anode
2:N/C
3:Source
4:Gate
5,6:Drain
7,8:Cathode
Making
Equivalent
Ci
it
D
vary according to
TPCP8AA1
８ＡＡ１
ＰＳ８
2004-03-18
⎯
⎯
単位: mm
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tpcp8aa1 Summary of contents
Page 1
... Rating Unit −55~125 °C T stg T −40~100 °C opr (Note and the drain power dissipation P th (ch-a) 1 TPCP8AA1 単位: mm 1:Anode 2:N/C 3:Source 4:Gate 5,6:Drain 7,8:Cathode ⎯ JEDEC ⎯ JEITA ＰＳ８ TOSHIBA Weight: mg (typ) Making ８ＡＡ１ ...
Page 2
... GS G off ( OUT (c) V out (ON) requires higher voltage than V GS (on) < V < (off (on) 2 TPCP8AA1 Min Typ. Max Unit ⎯ ⎯ ±1 µA ⎯ ⎯ ⎯ ⎯ 12 ⎯ ⎯ µA 1 ⎯ 0.5 1.2 V ⎯ ⎯ ...
Page 3
... Characteristic Forward voltage Reverse current Total capacitance (Ta = 25°C) Symbol Test Condition = 10V MHz TPCP8AA1 Min Typ. Max Unit ⎯ 0.36 0.41 V ⎯ 0.40 0.45 V ⎯ ⎯ µA 100 ⎯ ⎯ 2004-03-18 ...
Page 4
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 TPCP8AA1 030619EAA 2004-03-18 ...