tpc8033-h TOSHIBA Semiconductor CORPORATION, tpc8033-h Datasheet - Page 5

• Manufacturer Part Number: tpc8033-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
10
−80
2
8
6
4
2
0
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
V GS = 4.5 V
V GS = 10 V
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
1
0
R
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
t =10s
DS (ON)
C – V
board (a) (Note 2a)
board (b) (Note 2b)
P
I D = 4.3, 8.5, 17 A
D
100
40
– Ta
DS
– Ta
80
10
I D = 4.3, 8.5, 17 A
DS
150
(V)
120
C iss
C oss
C rss
100
160
200
5
100
0.1
2.5
1.5
0.5
10
40
35
30
25
20
15
10
1
−80
3
2
1
0
5
0
0
0
Common source
V DS = 10V
I D = 1mA
Pulse test
12
V DD = 24 V
6
10
−40
Drain−source voltage V
V DS
Ambient temperature Ta (°C)
−0.2
Total gate charge Q
5
Dynamic input/output
20
0
3
characteristics
−0.4
I
DR
V
th
– V
40
V GS
1
– Ta
DS
−0.6
6
40
80
g
DS
Common source
I D = 17 A
Ta = 25°C
Pulse test
12
Common source
Ta = 25°C
Pulse test
V GS = 0 V
(nC)
V DD = 24 V
−0.8
120
TPC8033-H
(V)
2007-12-25
160
−1
60
16
14
12
10
8
6
4
2
0