tpc8026 TOSHIBA Semiconductor CORPORATION, tpc8026 Datasheet - Page 6

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tpc8026

Manufacturer Part Number
tpc8026
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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100
0.1
10
1
0.1
* Single pulse
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
Ta = 25°C
Drain − source voltage V
1000
100
Safe operating area
0.1
10
0.001
1
1
t = 10 ms *
(1)Device mounted on a glass-epoxyboard (a)(Note 2a)
(2)Device mounted on a glass-epoxyboard (b)(Note 2b)
0.01
V DSS max
10
1 ms *
DS
(V)
0.1
100
Pulse width t
r
th
6
− t
1
w
w
(s)
10
Single pulse
100
(2)
(1)
1000
2007-02-15
TPC8026

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