tpc8060-h TOSHIBA Semiconductor CORPORATION, tpc8060-h Datasheet - Page 4

• Manufacturer Part Number: tpc8060-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
20
16
12
10
15
10
8
4
0
0
1
5
10
0.1
0
0
8
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
6
5
4
4.5
Drain-source voltage V
Gate-source voltage V
0.2
1
3.2
Drain current I
Ta = −55°C
1
0.4
2
⎪Y
I
I
D
D
100
fs
– V
– V
100
⎪ – I
3.1
DS
GS
0.6
D
3
D
Ta = −55°C
25
10
25
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.7 V
0.8
(V)
(V)
4
2.9
2.8
3
100
1
5
4
0.15
0.05
0.2
0.1
40
30
10
50
20
10
1
0
0
0.1
10
0
0
Common source
Ta = 25 ℃
Pulse test
8
4
6
4
5
4.5
Drain-source voltage V
Gate-source voltage V
0.4
2
3.4
4.5
Drain current I
1
R
V
0.8
DS (ON)
4
I
DS
D
9
– V
V GS = 10 V
– V
DS
I D = 18 A
4.5
GS
– I
1.2
6
D
D
3.3
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
V GS = 2.8 V
1.6
(V)
(V)
8
TPC8060-H
2009-07-07
2.9
3.2
3.1
3
100
10
2