tpc8041 TOSHIBA Semiconductor CORPORATION, tpc8041 Datasheet - Page 5

• Manufacturer Part Number: tpc8041
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
0.8
1.6
1.2
0.4
20
16
12
10
−80
0
8
4
0
0.1
2
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = 4.5 V
(2)
(1)
−40
Drain − source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
V GS = 10 V
Capacitance – V
0
1
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
P
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
40
80
– Ta
I D = 6.5 A
– Ta
80
10
I D = 3, 6.5, 13 A
DS
DS
120
°
°
13
C)
(V)
C)
120
C iss
C rss
C oss
3
160
100
160
5
100
0.1
2.5
1.5
0.5
10
40
30
50
20
10
−80
1
3
2
1
0
0
0
0
12
Common source
I D = 13 A
Ta = 25°C
Pulse test
6
V DS =24 V
Common source
V DS = 10 V
I D = 1mA
Pulse test
10
−0.2
Drain − source voltage V
−40
Ambient temperature Ta (
Total gate charge Q
10
Dynamic input/output
4.5
−0.4
0
characteristics
20
I
DR
12
V
th
3
−0.6
– V
40
– Ta
6
DS
30
1
−0.8
V DD =24 V
80
g
Common source
Ta = 25°C
Pulse test
DS
(nC)
V GS = 0 V
40
°
(V)
120
C)
−1
2008-06-24
TPC8041
−1.2
160
50
20
16
12
8
4
0