tpc8047-h TOSHIBA Semiconductor CORPORATION, tpc8047-h Datasheet - Page 5

• Manufacturer Part Number: tpc8047-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
12
10
10
−80
8
6
4
2
0
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(2)
(1)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
V GS = 10 V
40
Capacitance – V
1
0
R
DS (ON)
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t=10s
P
board (a) (Note 2a)
board (b) (Note 2b)
D
40
80
– Ta
I D = 4, 8, 16 A
– Ta
80
10
DS
I D = 4, 8, 16 A
DS
120
C oss
C rss
C iss
°
(V)
C)
120
°
C)
160
100
160
5
100
0.1
2.5
1.5
0.5
10
50
40
30
20
10
1
−80
0
2
1
0
0
0
16
Common source
V DS = 10 V
I D = 0.5 mA
Pulse test
8
10
Common source
I D = 16 A
Ta = 25°C
Pulse test
V DS = 32 V
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (
3
Total gate charge Q
20
4.5
2
Dynamic input/output
−0.4
0
characteristics
I
V GS
DR
V
1
th
−0.6
– V
40
40
8
– Ta
V DD = 32 V
DS
V GS = 0 V
−0.8
80
g
Common source
Ta = 25°C
Pulse test
DS
16
(nC)
60
°
(V)
−1.0
120
TPC8047-H
C)
2009-06-17
−1.2
160
80
20
16
8
12
4
0