tpc8208 TOSHIBA Semiconductor CORPORATION, tpc8208 Datasheet - Page 6

• Manufacturer Part Number: tpc8208
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.05
0.03
0.01
100
0.5
0.3
0.1
50
30
10
0.01
5
3
1
* Single pulse
Curves must be derated linearly
with increase in temperature.
I D max (pulse) *
Ta = 25°C
0.03
Drain-source voltage V
0.1
1000
100
Safe operating area
0.1
10
0.001
1
0.3
Single pulse
10 ms *
1
Single-device value at dual
operation
3
0.01
V DSS max
DS
10
1 ms *
(V)
(Note 3b)
30
0.1
100
Pulse width t
r
th
6
− t
1
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
w
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(S)
10
100
(4)
(3)
(2)
(1)
1000
2006-11-16
TPC8208