tpc8a03-h TOSHIBA Semiconductor CORPORATION, tpc8a03-h Datasheet - Page 5

• Manufacturer Part Number: tpc8a03-h
• Description: Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
2.0
1.5
1.0
0.5
10
12
9
6
3
0
−80
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = 4.5 V
(1)
(2)
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance − V
0
1
R
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
DS (ON)
I D = 4.3 A,8.5 A,17 A
P
board (a) (Note 2a)
board (b) (Note 2b)
t = 10 s
D
40
80
– Ta
− Ta
I D = 4.3 A,8.5 A,17 A
10
80
DS
DS
120
C oss
C iss
C rss
(V)
120
100
160
160
5
100
2.5
1.0
2.0
1.5
0.5
10
50
40
30
20
10
−80
0
1
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
V DS
10
−40
Drain-source voltage V
Ambient temperature Ta (°C)
−0.2
Total gate charge Q
10
Dynamic input/output
3
4.5
0
characteristics
−0.4
20
I
DR
V
th
V DD = 6 V
− V
40
− Ta
1
DS
−0.6
30
80
Common source
I D = 17 A
Ta = 25°C
Pulse test
g
24V
DS
Common source
Ta = 25°C
Pulse test
(nC)
V GS = 0 V
−0.8
40
TPC8A03-H
(V)
120
12V
2008-08-22
−1.0
160
50
20
16
12
8
4
0