tpc8a05-h TOSHIBA Semiconductor CORPORATION, tpc8a05-h Datasheet - Page 4

• Manufacturer Part Number: tpc8a05-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
15
10
10
5
4
3
2
1
0
0
5
1
0.1
0
0
8
10
Common source
V DS = 10 V
Pulse test
6
Common source
V DS = 10 V
Pulse test
5
4
4.5
Drain-source voltage V
Gate-source voltage V
0.2
1
Ta = −55°C
Drain current I
100
1
0.4
2
⎪Y
I
100
I
D
D
fs
– V
– V
⎪ − I
GS
DS
0.6
Ta = −55°C
D
3
D
25
25
10
2.8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.4 V
0.8
4
(V)
(V)
2.7
2.6
100
1.0
5
4
100
0.4
0.3
0.2
0.1
10
10
10
8
6
4
2
0
0
1
0.1
0
0
8
Common source
Ta = 25°C
Pulse test
6
5
4.5
4
Drain-source voltage V
Gate-source voltage V
0.4
2
Drain current I
2.5
1
R
0.8
V
DS (ON)
4
I
DS
D
3
V GS = 10 V
– V
– V
4.5
DS
5
GS
− I
1.2
6
D
D
2.8
I D = 10 A
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
1.6
V GS = 2.5 V
8
(V)
TPC8A05-H
(V)
2.9
2008-09-10
2.7
100
10
2