tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet

tpc8a01

Manufacturer Part Number

tpc8a01

Description

Field Effect Transistor Silicon N Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPC8A01.pdf (12 pages)

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Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ)

Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON

N CHANNEL MOS TYPE(U－MOSⅢ)

DC-DC CONVERTER

Notebook PC

Portable Machines and Tools

•

Absolute Maximum Ratings

Includes Schottky Barrier Diode Type. (Q2)

Low Forward Voltage: V

Small footprint due to small and thin package.

High Speed Switching.(Q1)

Small Gate Charge.(Q1): Qg＝17nC(Typ.)

Low drain-source ON resistance(Q2) R

High forward transfer admittance(Q2): |Y

Low leakage current. (Q1): I

Enhancement-mode

: (Q1) V

: (Q2) V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power

dissipation

(t = 10s)

Drain power

dissipation

(t = 10s)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Single-device value at operation

Channel temperature

Storage temperature range

Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.

This current leakage and not proper operating temprature or voltage may cause thermalrun. Please take forward and

reverse loss into consideration when you design.

(Note 2a)

(Note 2b)

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

= 1.1~2.3 V (V

Pulse

Single-device operation

Single-device value at

dual operation (Note 3b)

Single-device operation

Single-device value at

dual operation (Note 3b)

(Note 2a, 3b, 5)

= 20 kΩ)

(Q2): I

DSF

(Note 3a)

(Note 1)

=0.6V(Max.)

DSS

= 10 V, I

= 10 μA(Max.) (V

= 100 μA(Max.) (V

(Ta = 25°C)

Symbol

DGR

DSS

GSS

D(1)

D(2)

D(1)

D(2)

stg

TPC8A01

DS (ON)

= 1 mA)

| = 11 S (typ.)

(Note 4a)

46.8

±20

= 13 mΩ (typ.)

−55~150

Rating

0.75

0.45

0.11

150

1.5

1.1

= 30 V)

(Note 4b)

93.9

±20

8.5

Unit

°C

Weight: 0.080 g (typ.)

Circuit Configuration

(Includes Schottky Barrier Diode)

JEDEC

JEITA

TOSHIBA

1 SOURCE

2 GATE

3 SURCE/ANODE

4 GATE

5, 6DRAIN/CATHOUDE

2-6J1E

2006-11-16

TPC8A01

―

7, 8 DRAIN

Unit: mm

Related parts for tpc8a01

tpc8a01 Summary of contents

Page 1

... D(2) P 0.75 D(1) P 0.45 D(2) 46.8 93 (Note 4a) (Note 150 ch −55~150 T stg 1 TPC8A01 1 SOURCE 4 GATE 2 GATE 5, 6DRAIN/CATHOUDE 3 SURCE/ANODE JEDEC ― V JEITA ― V TOSHIBA 2-6J1E V Weight: 0.080 g (typ.) A Circuit Configuration (Includes Schottky Barrier Diode) °C °C ...

Page 2

... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 2a) dual operation R th (ch-a) (2) (Note 2b) b) Device mounted on a glass-epoxy board (b) ( Ω 6 Ω 8 TPC8A01 Max Unit 83.3 114 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 2006-11-16 ...

Page 3

... ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 6 DSF TPC8A01 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ −10 ⎯ 30 ⎯ 15 ⎯ 1.1 2.3 ⎯ ⎯ 4.5 9 ⎯ ...

Page 4

... (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 1 DSF = 8 TPC8A01 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ 30 ⎯ 15 ⎯ 1.1 2.3 ⎯ ⎯ 5.5 11 ⎯ ...

Page 5

... Common source Pulse test 0.5 0.4 0.3 0.2 0 (V) GS 1000 Common source Pulse test 25 100 100 0.1 (A) 5 TPC8A01 I – Common source 25°C 3.5 Pulse test 3.3 3.2 3.1 3.0 29 2.8 VGS=2. Drain-source voltage V ( – Common source Ta = 25°C ...

Page 6

... DS 3 Ciss 2 Coss Crss 1 Common source Ta = 25° 1MHz -80 10 100 ( VDS 160 200 0 6 TPC8A01 I – VGS=-1V Common source Ta = 25°C Pulse test 0.2 0.4 0.6 0 Drain-source voltage V ( – ...

Page 7

... Single-device value at dual I D max (pulse) * operation Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Drain-source voltage V − 0.1 1 Pulse width t (S) w (Note 3b DSS max ( TPC8A01 (4) (3) (2) (1) Single pulse 10 100 1000 2006-11-16 ...

Page 8

... DS 0.6 0.5 0.4 0.3 0.2 0 (V) GS 1000 25 100 10 Common source Pulse test 1 0.1 10 100 (A) 8 TPC8A01 I – Common source 25°C Pulse test 2.7 2.6 2.5 2.4 2.3 2.2 VGS=2. Drain-source voltage V ( – Common source Ta = 25°C Pulse test ID=8 ...

Page 9

... iss 2 C rss C oss 1 Common source Ta = 25° 1MHz -80 10 100 ( VDS 160 200 0 9 TPC8A01 I – VGS=0V Common source Ta = 25°C Pulse test - 0.2 - 0.4 - 0 Drain-source voltage V ( – Common source ...

Page 10

... I D max (pulse) * operation Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.01 0.1 1 Drain-source voltage V − 0 Pulse width t (S) w (Note 3b DSS max 10 100 ( TPC8A01 (4) (3) (2) (1) Single pulse 100 1000 2006-11-16 ...

Page 11

... Drain-source voltage V 100000 10000 1000 100 Pulse test 10 0.8 1 (V) DS Pulse test TPC8A01 I – Tch DSS Pulse test 100 120 Channel temperature Tch (°C) 2006-11-16 (typ.) 140 160 ...

Page 12

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 12 TPC8A01 20070701-EN 2006-11-16 ...

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