tpc8305 TOSHIBA Semiconductor CORPORATION, tpc8305 Datasheet
tpc8305
Manufacturer Part Number
tpc8305
Description
Silicon P Channel Mos Type U-mosii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPC8305.pdf
(7 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Part Number:
TPC8305
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
tpc8305-H
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain−source ON resistance
High forward transfer admittance : |Y
Low leakage current : I
Enhancement mode : V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain curren
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
(Note 2a, Note 3b, Note 5)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
DC
Pulse
Single-device
operation
Single-device value
at dual operation
Single-device
operation
Single-device value
at dual operation
GS
= 20 kΩ)
DSS
(Note 3a)
(Note 3a)
(Note 3b)
(Note 3b)
th
(Note 1)
(Note 4)
(Note 1)
= −0.5~ −1.2 V (V
= −10 μA (max) (V
: R
(Ta = 25°C)
Symbol
V
P
P
P
V
V
DS (ON)
P
E
E
T
I
I
T
D (1)
D (1)
D (2)
DGR
GSS
DSS
D(2)
fs
I
DP
AR
AS
AR
stg
D
ch
TPC8305
| = 12 S (typ.)
DS
= 24 mΩ (typ.)
DS
= −10 V, I
= −20 V)
−55~150
Rating
0.75
0.45
32.5
0.10
−20
−20
±12
−20
150
1.5
1.0
−5
−5
1
D
= −1mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.08 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
2-6J1E
2006-11-16
TPC8305
―
―
Unit: mm
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tpc8305 Summary of contents
Page 1
... V DSS V −20 V DGR V ±12 V GSS I − − 1 1.0 D(2) P 0. 0.45 D ( − 0. 150 ° −55~150 °C stg 1 TPC8305 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.08 g (typ.) Circuit Configuration 2006-11-16 ...
Page 2
... Symbol Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board ( Ω − TPC8305 Max Unit 83.3 125 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) 2006-11-16 ...
Page 3
... − (Ta = 25°C) Symbol Test Condition I — DRP − DSF TPC8305 Min Typ. Max — — ±10 — — −10 −20 — — −8 — — −0.5 — −1.2 — — ...
Page 4
... TPC8305 2006-11-16 ...
Page 5
... TPC8305 2006-11-16 ...
Page 6
... TPC8305 2006-11-16 ...
Page 7
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8305 20070701-EN 2006-11-16 ...