tpca8012-h TOSHIBA Semiconductor CORPORATION, tpca8012-h Datasheet - Page 2

• Manufacturer Part Number: tpca8012-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max. channel temperature
Note 5:
TPCA
8012-H
(Note 5)
* Weekly code: (Three digits)
DD
= 24 V, T
※
Characteristic
(a)
ch
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Type
= 25°C (initial), L = 100 μH, R
Lot No.
25.4 × 25.4 × 0.8
(Tc=25℃)
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
2.78
44.6
78.1
Max
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
°C/W
Unit
= 40 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCA8012-H
2007-12-26