tpca8042 TOSHIBA Semiconductor CORPORATION, tpca8042 Datasheet - Page 3

• Manufacturer Part Number: tpca8042
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
GS
3
= 45 A, V
(Ta = 25°C)
≈ 24 V, V
= ± 20 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
GS
= 10 μ s
= 1 mA
= 23 A
DS
= 23 A
= 23 A
⎯
= 0 V
= 0 V
= − 20 V
= 10 V, I
= 0 V
= 0 V, f = 1 MHz
= 0 V
I
D
V
= 23A
DD
≈ 15 V
D
= 45 A
V
OUT
Min
Min
1.3
30
10
47
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2900
Typ.
Typ.
460
800
4.0
2.6
94
12
24
23
78
56
10
17
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCA8042
2008-06-24
± 100
− 1.2
Max
Max
135
2.5
5.7
3.3
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
m Ω
nC
nA
μ A
pF
ns
V
V
S
A
V